EUV_VUV 검사시스템, 솔라셀 결함검사, 반도체검사, 레이저프로파일링

UV경화 / 세정 시스템	적외선 건조시스템	펄스UV경화 시스템	제논 조사장치	내후성 시험장비	광계측 분석기기	솔라셀 제조장비


UV 경화 시스템, 모듈형 UV 경화시스템 UV 세정 시스템 UV 노광 시스템 SPOT UV, UV LED FLOOD UV 외	MIR / NIR 건조시스템 적외선 건조시스템 IR / 열풍 건조시스템 소성로 (FIRING FURNACE)	펄스UV 경화 시스템 펄스UV 세정 시스템 외	제논 조사장치 75W, 100W, 150W 200W, 300W, 1 kW 3 kW ~ Max. 15 kW	내후성 시험장비 WEATHER TESTER 기타 주문형 시험장비	광량계, 광계측기 광분석시스템 광모니터링 시스템 외	솔라셀 제조장비 SOLAR FIRING SOLAR SIMULATOR (CELL, MODULE) SOLAR CELL PRINTING


X-UV 시스템	램프 및 기타제품	광신터링 시스템	스크린 인쇄 시스템	수처리 살균 시스템	LED / BLU 검사장비	엔지니어링


X-UV 경화 시스템 PHOTONIC ACTIVATION X-UV 살균, 세정 외	MIR / NIR 램프, 제논램프 펄스UV램프 솔라시뮬레이션 램프 외	X-LIGHT 신터링 시스템 X-LIGHT 어닐링 시스템 PHOTONIC CURING SYS	평면 스크린인쇄 시스템 (자동, 반자동, 인라인)	펄스UV 수처리 시스템 펄스UV 살균 시스템	LED BLU 휘도 검사시스템 LED 조도 검사시스템 SWIR검사, X-RAY검사 NEUTRON 검사시스템	솔라셀 제조 라인 인쇄 코팅, 전처리, 건조, 경화 생산 라인 롤 코터 / DIP 코터 라인



EUV / VUV 검사시스템 (INSPECTION SYSTEM)										Home > Inspection System > EUV / VUV Inspection

	BLU 휘도검사 시스템
	SWIR 검사 시스템
	EUV & VUV 검사 시스템
	X-RAY 검사 시스템
	NEUTRON 검사 시스템

EUV & Vacuum UV 검사시스템

(EUV & Vacuum UV INPECTION SYSTEM)

EUV and VUV Inspection systems provide high resolution (typically down to less than 10 microns), high dynamic range (12 to 16 bit) as well as good temporal resolution (down to microsecond range) that are necessary for modern pulsed plasma discharge EUV sources.

The system can acquire single shot or synchronized multiple shot images at up to 13fps at full resolution from a native EUV source without suffering from bleeding artifacts.
Flanged and/or in vacuum versions are available depending on the flexibility required for either mask blank / resist / source / optic characterization and inspection.

Sensitivity response can be extended from 13.5 nm up to 0,0135 nm should the system be used to sense multiple characteristic lines. Deep cooling allows very low dark current down to less than 0.005 electron/pixel/sec for extended exposure should very faint signal requires long integration periods.

적용분야

• EUV resin characterization

• Soft X-ray astronomy

• XUV plasma diagnostic

• EUV mirror / grating calibration

• spectroscopy

• forensics

• Pinhole imaging of Z-pinch soft X-ray source

• soft x-ray microscopy

• 2 dimensional elemental mapping

• coherent soft X-ray imaging

• EUV lithography

특징 및 장점 (ADVANTAGES)

• Smalll pixel size less < 15microns pixel size.

• Cooled CCD sensor with 55 degree C delta T.

• 2 tap 3MHz frequency

• Sensor size from 19 and 38mm diagonal.

• Beryllium input windows.

• Very low read out noise < 30 electrons.

• High detection efficiency between 0.1 and 8

keV with near single photon counting detection

capability..

• Very low dark current with less than 1 electron

per pixel per second (cooling options for

further noise reduction).

• Simultaneous integration / read out. Enabling

100% duty cycle acquisition.

• On chip binning.

• Detector synchronisation: pixel locked for dual channel acquisition.

• Camera link and GigE digital interface.

• Low profile electronics.

• Air cooled / water cooled option.

기술 사양 (SPECIFICATIONS)
Cooled megapixel XUV CCD camera	Cooled 4 megapixel XUV CCD camera
. 1024 (h) x 1024 (v) CCD array	. 2048 (h) x 2048 (v) CCD array
. Input pixel size: 13 x 13microns	. Input pixel size: 15 x 15microns
. 19mm diagonal	. 43mm diagonal
. 5 fps at full resolution @ 2x3 MHz	. 1,5 fps at full resolution @ 2x3 MHz
. Read out noise: 25 electrons @ 2x3 MHz,	. Read out noise: 25 electrons @ 2x3 MHz,
. Full well capacity: 100,000 electrons in binning1x1	. Full well capacity: 100,000 electrons in binning- 1x1
. Dark current: <1 electron / pixel / second	. Dark current: <1 electron / pixel / second
. 14-bit digitisation	. 14-bit digitisation
. Camera link / GigE nterface	. Camera link / GigE nterface
. Synchronisation / control: via TTL pulse or pixel clock	. Synchronisation / control: via TTL pulse or pixel clock
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상기 사양은 제품의 성능향상 및 개량을 위하여 변경될 수 있으며, 요청사양은 적용분야에 따라 당사 기술팀과 협의 후 추가 설치 가능하므로, 시스템에 대한 상세한 사양은 당사 영업팀과 상세하게 협의하시기 바랍니다.

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