NEUTRON 검사시스템, 솔라셀 결함검사, 반도체검사, 레이저프로파일링

UV경화 / 세정 시스템	적외선 건조시스템	펄스UV경화 시스템	제논 조사장치	내후성 시험장비	광계측 분석기기	솔라셀 제조장비


UV 경화 시스템, 모듈형 UV 경화시스템 UV 세정 시스템 UV 노광 시스템 SPOT UV, UV LED FLOOD UV 외	MIR / NIR 건조시스템 적외선 건조시스템 IR / 열풍 건조시스템 소성로 (FIRING FURNACE)	펄스UV 경화 시스템 펄스UV 세정 시스템 외	제논 조사장치 75W, 100W, 150W 200W, 300W, 1 kW 3 kW ~ Max. 15 kW	내후성 시험장비 WEATHER TESTER 기타 주문형 시험장비	광량계, 광계측기 광분석시스템 광모니터링 시스템 외	솔라셀 제조장비 SOLAR FIRING SOLAR SIMULATOR (CELL, MODULE) SOLAR CELL PRINTING


X-UV 시스템	램프 및 기타제품	광신터링 시스템	스크린 인쇄 시스템	수처리 살균 시스템	LED / BLU 검사장비	엔지니어링


X-UV 경화 시스템 PHOTONIC ACTIVATION X-UV 살균, 세정 외	MIR / NIR 램프, 제논램프 펄스UV램프 솔라시뮬레이션 램프 외	X-LIGHT 신터링 시스템 X-LIGHT 어닐링 시스템 PHOTONIC CURING SYS	평면 스크린인쇄 시스템 (자동, 반자동, 인라인)	펄스UV 수처리 시스템 펄스UV 살균 시스템	LED BLU 휘도 검사시스템 LED 조도 검사시스템 SWIR검사, X-RAY검사 NEUTRON 검사시스템	솔라셀 제조 라인 인쇄 코팅, 전처리, 건조, 경화 생산 라인 롤 코터 / DIP 코터 라인



NEUTRON 검사 시스템										Home > Inspection System > NEUTRON 검사

	BLU 휘도검사 시스템
	SWIR 검사 시스템
	EUV & VUV 검사 시스템
	X-RAY 검사 시스템
	NEUTRON 검사 시스템

NEUTRON 검사시스템

(NEUTRON INPECTION SYSTEM)

The Neutron Imaging system offers 1680 x 1320 pixels resolution and 231 x 294 mm active area for fast crystal orientation routines. This system allows a unique digital backscattered neutron Laue diffraction pattern to be recorded as it features a centre hole to allow the neutron beam to pass through the camera system prior to reaching the sample. This configuration allows the neutron scintillator to be positioned very close to the sample, so that a large solid angle of diffracted beams can be imaged.

High sensitivity / high resolution is achieved thanks to the use of custom scintillator and intensified cooled CCD camera read out which enables high electro optical gain down to singe neutron sensitivity.
Extended exposures can be used for unveiling weak diffracting patterns.

Synchronization with pulsed neutron sources down to 100ns at 50Hz repetition rate can be achieved by feeding a TTL triggering pulse to a BNC connector.
Remote real time acquisition is performed via a device server driver.

적용분야

• Neutron crystal alignment

• Back scattered neutron diffraction

• Single crystal neutron diffraction

• Neutron Laue imaging

• Neutron imaging

• Small neutron angle scattering

• Time of flight neutron diffraction

• Laue neutron diffraction

특징 및 장점 (ADVANTAGES)

• 4 or 6 microns pore size

• Fast P43 (1ms decay at 10%) and P46

(0.2ms at 10%) phopshor screens

• Single micro channel plate (MCP) resolution above > 60 lp / mm, high modulation contrast, and up to 8,000 luminous gain

• Dual MCP stack giving photon counting sensitivity with up to 300,000 luminous gain

• Input size varies from 18 mm up to 25 mm diagonal

• Quartz, glass and or fibre optic input windows, fibre optic output windows

• Multi-alkali photocathodes with Equivalent Background Illumination (EBI) noise down to 3 10-3 counts per pixel per second are used for UV and blue response cameras

• GaAsP and GaAs photocathodes are selected for visible and red response cameras respectively, EBI noise with 6 10-2 counts per pixel per second (cooling options for reduced noise operation)

• Standard gating option : 100 ns 30 kHz repetition rate

• Ultra fast gating down to 3 ns using special conductive underlaying coatings, MHz repetition rate is achieved using dedicated pulsers/gated power supply unit with adjustable gate time / delays down to nanosecond steps

기술 사양 (SPECIFICATIONS)
Intensified CCD cameras	Panoramic Intensified CCD cameras
· 1872 (h) x 1252 (v) CCD array	· 7488 (h) x 2505 (v) CCD array
· Input pixel size : 177x 177 microns	· Input pixel size : 177 x 177 microns
· LiF scintillator allowing optimized quantum efficiency with thermal neutrons	· LiF scintillator allowing optimized quantum efficiency with thermal neutrons
· 3 fps at full resolution @ 20 MHz	· 0.7 fps at full resolution 8@10 MHz
· Readout noise : 6-9 electrons @ 10 MHz	· Readout noise : 6-9 electrons 8@10 MHz
· Full well capacity : 13,000 electrons in binning 1x1	· Full well capacity : 13,000 electrons
· Dark current : 0.01 electrons/pixel/second	· Dark current: 0.05 electrons / pixel / frame at full resolution
· On chip binning up to 8x8	· 12-bit digitisation
· 12-bit digitisation	· Extended 16-bit digitisation with up to >200,000 electrons equivalent full well capacity
· Extended 16-bit digitisation with up to >200,000 electrons equivalent full well capacity	· Firewire / Camera link / GigE interface
· Firewire / Camera link / GigE interface	· Synchronisation / control : via TTL pulse
· Synchronisation / control : via TTL pulse	· 360° geometry

상기 사양은 제품의 성능향상 및 개량을 위하여 변경될 수 있으며, 요청사양은 적용분야에 따라 당사 기술팀과 협의 후 추가 설치 가능하므로, 시스템에 대한 상세한 사양은 당사 영업팀과 상세하게 협의하시기 바랍니다.